رشد نانو اکسید فلزی (tio2) در دما و فشار بالا و مطالعه ویژگی ساختار آن

ویژگی های نانو ساختار نقره/اکسید سیلیکون

Degenerate Four Wave Mixing in Photonic Crystal Fibers

In this study, Four Wave Mixing (FWM) characteristics in photonic crystal fibers are investigated. The effect of channel spacing, phase mismatching, and fiber length on FWM efficiency have been studied. The variation of idler frequency which obtained by this technique with pumping and signal wavelengths has been discussed. The effect of fiber dispersion has been taken into account; we obtain th...

تغییرات خواص فیزیکوشیمیایی و ساختار مولکولی نشاسته گندم تحت تأثیر دما و فشار تنشی بالا

‏ In this research the effects of two common cooking processes of foods, namely, autoclave and extrusion cooking on the molecular and physicochemical properties of wheat starch were investigated. The results showed that the solubility of the autoclaved samples increased with increasing the temperature while their relative viscosity decreased. These findings indicated that the molecular degradat...

تغییرات خواص فیزیکوشیمیایی و ساختار مولکولی نشاسته گندم تحت تأثیر دما و فشار تنشی بالا

‏ In this research the effects of two common cooking processes of foods, namely, autoclave and extrusion cooking on the molecular and physicochemical properties of wheat starch were investigated. The results showed that the solubility of the autoclaved samples increased with increasing the temperature while their relative viscosity decreased. These findings indicated that the molecular degradat...

مقایسه ویژگی نانو ساختاری اکسید آلومینیوم و اکسید تیتانیوم

Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric ...

ویژگی های نانو ساختار نقره/اکسید سیلیکون

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